Hydrostatic pressure effect on the electrical conductivity of indium antimonide
Lam, Hing Yee
Master of Science
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The electrical conductivity of n-type InSb in the temperature range 77K - 300K has been calculated by using the Boltzmann equation with a relaxation time ansatz. The tv/o dominant scattering mechanisms in this temperature range are the impurity scattering and the polar scattering. The hydrostatic pressure effects on the electrical conductivity have been studied by considering the variations of the band structure, the carrier concentration, the electron effective mass and the static dielectric constant of the material. The variation of the electrical conductivity up to 10 kbar at the temperatures T = 81 K and T = 290 K is compared with experimental data.