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    AuthorHughes, D. G. (1)Rozenbergs, Janis (1)Suzuki, Akira (1)Subject
    Semiconductors (3)
    Contamination (Technology) (1)Dielectric approach to impurity conduction (1)Electrons Scattering (1)Indium antimonide (1)Ion implantation (1)... View MoreDate Issued1970 (1)1974 (1)1977 (1)xmlui.ArtifactBrowser.AdvancedSearch.type_discipline
    Physics (3)

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    Effect of a strong magnetic field on the Mott Transition in Semiconductors 

    Hughes, D. G. (1970)
    This thesis considers the effect of a magnetic field on the transition from a conducting to a non-conducting state in impurity semiconductors, with particular reference to indium antimonide. Two models for such a ...
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    Diffusion of impurities from ion implants in silicon 

    Rozenbergs, Janis (1974)
    The use of shallow single and double impurity ion implants as diffusion sources was studied on bare (111) silicon wafers implanted at room temperature with 45 KeV boron, phosphorus and arsenic. The samples were diffused ...
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    Elastic and inelastic scattering of conduction electrons from oscillating impurities in semiconductors 

    Suzuki, Akira (1977)
    Elastic scattering and inelastic scattering of conduction electrons by oscillating ionized impurities in semiconductors have been analyzed on the assumption that the scattering potential is the Coulomb potential between ...

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