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Hydrostatic pressure effect on the Gunn threshold electric effect in n-InSb
(1978)
The Gunn effect as a function of pressure has been
studied in n~type InSb. The Gunn threshold field is found to
decrease with increasing pressure reaching a minimum at P ~ 9
kbars. It then increases while the oscillations ...
Microwave interferometer for measuring dielectric properties of low-loss solids
(1974)
An X-band microwave bridge-interferometer is constructed for measuring
the permittivity of solids. Using simple theory, the system is first tested
with several materials of known permittivity (e.g. ertalon, plexiglas ...
Hall effect investigations in n-InSb under pressure
(1978)
Low field electrical transport properties of n-InSb in the
temperature range 6.4K-300K have been studied under pressures up
to 15 kbar using Hall measurements. The pressure dependence of
the carrier concentration, the ...
Electrical conduction in nylon fibre and cellulosic capacitor tissue
(1970)
The experiments described in this work are divided into two main
parts. The first is concerned with electrical properties of a
single filament of nylon held between two tungsten hook-electrodes.
Currents were observed ...
Evaporation of highly charged waterdrops in the atmosphere
(1975)
The evaporation of charged waterdrops is accompanied by negligible
loss of charge; consequently, as the surface area falls, the electrostatic
pressure increases. When a critical value is reached, one or more highly
charged ...
Effect of a strong magnetic field on the Mott Transition in Semiconductors
(1970)
This thesis considers the effect of a magnetic field on
the transition from a conducting to a non-conducting state in impurity
semiconductors, with particular reference to indium antimonide.
Two models for such a ...
Hydrostatic pressure effect on the electrical conductivity of indium antimonide
(1976)
The electrical conductivity of n-type InSb in the
temperature range 77K - 300K has been calculated by using the
Boltzmann equation with a relaxation time ansatz. The tv/o
dominant scattering mechanisms in this temperature ...
Diffusion of impurities from ion implants in silicon
(1974)
The use of shallow single and double impurity ion implants
as diffusion sources was studied on bare (111) silicon wafers
implanted at room temperature with 45 KeV boron, phosphorus and
arsenic. The samples were diffused ...