The Gunn effect as a function of pressure has been studied in n~type InSb. The Gunn threshold field is found to decrease with increasing pressure reaching a minimum at P ~ 9 kbars. It then increases while the oscillations ...

An X-band microwave bridge-interferometer is constructed for measuring the permittivity of solids. Using simple theory, the system is first tested with several materials of known permittivity (e.g. ertalon, plexiglas ...

Low field electrical transport properties of n-InSb in the temperature range 6.4K-300K have been studied under pressures up to 15 kbar using Hall measurements. The pressure dependence of the carrier concentration, the ...

The experiments described in this work are divided into two main parts. The first is concerned with electrical properties of a single filament of nylon held between two tungsten hook-electrodes. Currents were observed ...

The evaporation of charged waterdrops is accompanied by negligible loss of charge; consequently, as the surface area falls, the electrostatic pressure increases. When a critical value is reached, one or more highly charged ...

This thesis considers the effect of a magnetic field on the transition from a conducting to a non-conducting state in impurity semiconductors, with particular reference to indium antimonide. Two models for such a ...

The electrical conductivity of n-type InSb in the temperature range 77K - 300K has been calculated by using the Boltzmann equation with a relaxation time ansatz. The tv/o dominant scattering mechanisms in this temperature ...

The use of shallow single and double impurity ion implants as diffusion sources was studied on bare (111) silicon wafers implanted at room temperature with 45 KeV boron, phosphorus and arsenic. The samples were diffused ...