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Now showing items 51-60 of 60
DVS-capable ultra-low-power subthreshold CMOS temperature sensor / by Gregory Toombs.
(2010)
There are many contemporary contexts in which a small, low-power-consumption temperature sensor is very valuable. Power, area, speed and temperature range factors are important constraints in modern VLSI design. As transistor ...
A new fingerprint design using optical orthogonal codes
(2014)
Digital fingerprinting has been proposed to restrict illegal distribution of digital media, where every piece of media has a unique fingerprint as an identifying feature that can be traceable. However, fingerprint systems ...
Autonomous navigation using image processing
(2016)
In the recent years, the pursuit intelligent and self-operated machines have increased. The human user is to be completely eliminated or minimized as much as possible. It is also popular now to observe machines that are ...
Sub-1 V, 4 nA CMOS voltage references with digitally-trimmable temperature coefficient
(2014-12-12)
Voltage references are fundamental to mixed signal converters which are widely used in elec-
tronics. Hence there are signicant advantages in having the voltage reference operate with
less power while minimizing area ...
Development and implementation of high performance and high efficiency interior permanent magnet synchronous motor drive
(2014-01-22)
As the motor consumes more than 50% of total electrical energy produced in the world, the efficiency optimization of the motor is a burning issue in terms of saving energy and the environment. In modern days researchers ...
Localized harmonic motion imaging
(2012-11-10)
Localized Harmonic Motion (LHM) Imaging is a new technique of ultrasound imaging which uses the localized stimulus of the oscillatory ultrasonic radiation force as produced by a modulated signal, and estimates the resulting ...
Low temperature epitaxial growth of III-Nitride semiconductors on silicon carbide templates by remote plasma metal-organic chemical vapor deposition
(2018)
Group III-Nitride (III-N) semiconductors are of high interest due to their thermal and electrical properties. Opposed to other III-V group semiconductors III-N semiconductors are hexagonal wurtzite structures that have a ...
Modeling of a high frequency field effect transitor on indium gallium nitride: the metal oxide semiconductor capacitor 1=channel model
(2012-11-10)
Quantum devices are an important class of modern heterostructure devices in which quantum effects are exploited directly. A Gallium Nitride high frequency field effect transistor (FET), the subject of this work, exploits ...
Coded based protection in mesh networks
(2010)
Since the Internet revolution of the 1990s; ever increasing levels of connectivity have been
integrated into society. This has ushered in the era of globalization and a new plateau
in prosperity. Credit for this ...
Vision-based control and autonomous landing of a VTOL-UAV
(2015-10-21)
In recent years the popularity of quadrotor unmanned aerial vehicles (UAVs) has increased. Today, UAVs are widely used by military and police forces for surveillance. They are used by industry for such tasks as traffic ...