Browsing Retrospective theses by Subject "Indium antimonide crystals"
Now showing items 1-2 of 2
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Hydrostatic pressure effect on the Gunn threshold electric effect in n-InSb
(1978)The Gunn effect as a function of pressure has been studied in n~type InSb. The Gunn threshold field is found to decrease with increasing pressure reaching a minimum at P ~ 9 kbars. It then increases while the oscillations ... -
Pressure dependent extrinsic effects in InSb
(1980)Electrical transport properties of n and p-type InSb in the temperature range 6.2-300K have been studied under pressures up to 15 kbar using Hall measurements. The donor gap in n-InSb is found to increase linearly with ...