Lakehead University Library Logo
    • Login
    Browsing by Advisor 
    •   Knowledge Commons Home
    • Browsing by Advisor
    •   Knowledge Commons Home
    • Browsing by Advisor
    JavaScript is disabled for your browser. Some features of this site may not work without it.
    quick search

    Browse

    All of Knowledge CommonsCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsDisciplineAdvisorCommittee Member

    My Account

    Login

    Browsing by Advisor

    • 0-9
    • A
    • B
    • C
    • D
    • E
    • F
    • G
    • H
    • I
    • J
    • K
    • L
    • M
    • N
    • O
    • P
    • Q
    • R
    • S
    • T
    • U
    • V
    • W
    • X
    • Y
    • Z

    Sort by:

    Order:

    Results:

    Now showing items 1-10 of 10

    • title
    • issue date
    • submit date
    • xmlui.ArtifactBrowser.ConfigurableBrowse.sort_by.author
    • ascending
    • descending
    • 5
    • 10
    • 20
    • 40
    • 60
    • 80
    • 100
      • Thumbnail

        Epitaxial growth of p-type doped III-V nitride semiconductor on sapphire substrate using remote plasma metal organic chemical vapor deposition 

        Rangaswamy, Chandana (2019)
        Lakehead University Remote Plasma-enhanced Metal Organic Chemical Vapour Deposition (RP-MOCVD) is used to grow III-V nitride semiconductor material. RP-MOCVD use nitrogen plasma as a nitrogen source along with group III ...
      • Thumbnail

        Evaluation of GaN and InGaN semiconductors as potentiometric anion selective electrodes 

        Dimitrova, Rozalina Stefanova (2006)
        Ion selective electrodes (ISEs) are chemical sensors primarily used for in situ analysis and monitoring of air, water, and land. Despite their easy fabrication, low cost, and simple usage, ISEs still suffer from the ...
      • Thumbnail

        Gallium nitride on low temperature cofired ceramic templates for Schottky junctions 

        Tot, Jonny (2021)
        In this work aluminum, silicon and zinc oxide were used as intermediate layers for thin film growth on cofired glass ceramic substrates. The motivation behind this work is a direct deposition of nitride thin films on the ...
      • Thumbnail

        Gallium nitride, indium nitride, and heterostructure development using the MEAglow growth system 

        Binsted, Peter W. (2014-12-11)
        This thesis presents an in depth study of semiconductor development using a new process termed Migration Enhanced Afterglow (MEAglow). The MEAglow growth reactor is housed in the Lakehead University Semiconductor Research ...
      • Thumbnail

        Growth and characterization of group III-nitrides by migration enhanced afterglow epitaxy 

        Gergova, Rositsa (2014-12-11)
        The work presented in this thesis investigates the growth and properties of group III- nitride semiconductors that were grown using the Migration Enhanced Afterglow Epitaxy (MEAglow) method. This work was to enhance the ...
      • Thumbnail

        Investigation and optimization of group III-N semiconductor thin-film growths using DC nitrogen plasma 

        Kadikoff, Berek (2019)
        The Lakehead University remote plasma-enhanced metalorganic chemical vapour deposition (RPE-MOCVD) reactor utilizes nitrogen plasma to provide the required nitrogen species in group III-N semiconductor material growth. ...
      • Thumbnail

        Investigation of the impact of impurities on the properties of nitride semiconductors grown by RPECVD 

        Skerget, Shawn (2015-10-21)
        Progress toward the improvement of optical emission from InGaN optical active region devices is made through a combination of the tailoring of p-type gallium nitride growth recipes and bandstructure calculations on a graded ...
      • Thumbnail

        Modeling of a high frequency field effect transitor on indium gallium nitride: the metal oxide semiconductor capacitor 1=channel model 

        Menkad, Tarik (2012-11-10)
        Quantum devices are an important class of modern heterostructure devices in which quantum effects are exploited directly. A Gallium Nitride high frequency field effect transistor (FET), the subject of this work, exploits ...
      • Thumbnail

        Optimization of the process for sol-gel derived ZnO:Al thin films for transparent conducting oxide applications 

        Nagorski, Matthew (2021)
        Transparent and conducting Al-doped ZnO thin films with c-axis-preferred orientation were prepared on glass substrate via sol-gel route. The physical, optical and electrical properties were investigated to determine an ...
      • Thumbnail

        Testing of nitride-semiconductor-based sensors for monitoring in control systems / by Hang Yu. 

        Yu, Hang (2008)
        "Sensors have become integrated into control system, for either mechanical, optical, chemical, or biological applications. The new materials for the sensor designing, diluted magnetic semiconductors (DMS), are attractive ...

        Lakehead University Library
        Contact Us | Send Feedback

         

         


        Lakehead University Library
        Contact Us | Send Feedback