Browsing by Advisor "Alexandrov, Dimiter"
Now showing items 1-9 of 9
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Epitaxial growth of p-type doped III-V nitride semiconductor on sapphire substrate using remote plasma metal organic chemical vapor deposition
(2019)Lakehead University Remote Plasma-enhanced Metal Organic Chemical Vapour Deposition (RP-MOCVD) is used to grow III-V nitride semiconductor material. RP-MOCVD use nitrogen plasma as a nitrogen source along with group III ... -
Evaluation of GaN and InGaN semiconductors as potentiometric anion selective electrodes
(2006)Ion selective electrodes (ISEs) are chemical sensors primarily used for in situ analysis and monitoring of air, water, and land. Despite their easy fabrication, low cost, and simple usage, ISEs still suffer from the ... -
Gallium nitride, indium nitride, and heterostructure development using the MEAglow growth system
(2014-12-11)This thesis presents an in depth study of semiconductor development using a new process termed Migration Enhanced Afterglow (MEAglow). The MEAglow growth reactor is housed in the Lakehead University Semiconductor Research ... -
Growth and characterization of group III-nitrides by migration enhanced afterglow epitaxy
(2014-12-11)The work presented in this thesis investigates the growth and properties of group III- nitride semiconductors that were grown using the Migration Enhanced Afterglow Epitaxy (MEAglow) method. This work was to enhance the ... -
Investigation and optimization of group III-N semiconductor thin-film growths using DC nitrogen plasma
(2019)The Lakehead University remote plasma-enhanced metalorganic chemical vapour deposition (RPE-MOCVD) reactor utilizes nitrogen plasma to provide the required nitrogen species in group III-N semiconductor material growth. ... -
Investigation of the impact of impurities on the properties of nitride semiconductors grown by RPECVD
(2015-10-21)Progress toward the improvement of optical emission from InGaN optical active region devices is made through a combination of the tailoring of p-type gallium nitride growth recipes and bandstructure calculations on a graded ... -
Modeling of a high frequency field effect transitor on indium gallium nitride: the metal oxide semiconductor capacitor 1=channel model
(2012-11-10)Quantum devices are an important class of modern heterostructure devices in which quantum effects are exploited directly. A Gallium Nitride high frequency field effect transistor (FET), the subject of this work, exploits ... -
Optimization of the process for sol-gel derived ZnO:Al thin films for transparent conducting oxide applications
(2021)Transparent and conducting Al-doped ZnO thin films with c-axis-preferred orientation were prepared on glass substrate via sol-gel route. The physical, optical and electrical properties were investigated to determine an ... -
Testing of nitride-semiconductor-based sensors for monitoring in control systems / by Hang Yu.
(2008)"Sensors have become integrated into control system, for either mechanical, optical, chemical, or biological applications. The new materials for the sensor designing, diluted magnetic semiconductors (DMS), are attractive ...
