Browsing by Subject "Gallium nitride"
Now showing items 1-5 of 5
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Epitaxial growth of p-type doped III-V nitride semiconductor on sapphire substrate using remote plasma metal organic chemical vapor deposition
(2019)Lakehead University Remote Plasma-enhanced Metal Organic Chemical Vapour Deposition (RP-MOCVD) is used to grow III-V nitride semiconductor material. RP-MOCVD use nitrogen plasma as a nitrogen source along with group III ... -
Evaluation of GaN and InGaN semiconductors as potentiometric anion selective electrodes
(2006)Ion selective electrodes (ISEs) are chemical sensors primarily used for in situ analysis and monitoring of air, water, and land. Despite their easy fabrication, low cost, and simple usage, ISEs still suffer from the ... -
Gallium nitride, indium nitride, and heterostructure development using the MEAglow growth system
(2014-12-11)This thesis presents an in depth study of semiconductor development using a new process termed Migration Enhanced Afterglow (MEAglow). The MEAglow growth reactor is housed in the Lakehead University Semiconductor Research ... -
Modeling of a high frequency field effect transitor on indium gallium nitride: the metal oxide semiconductor capacitor 1=channel model
(2012-11-10)Quantum devices are an important class of modern heterostructure devices in which quantum effects are exploited directly. A Gallium Nitride high frequency field effect transistor (FET), the subject of this work, exploits ... -
P-type gallium nitride semiconductor development and characterization for LEDs and other devices
(2013)Migration Enhanced Afterglow (AIEAglow) is proposed as a fabrication technology to produce high indium content indium gallium nitride (IriGaN) LEDs operating in the green wavelengths. This research presents results for ...
