Please use this identifier to cite or link to this item:
https://knowledgecommons.lakeheadu.ca/handle/2453/2260
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Keeler, W. J. | |
dc.contributor.author | Fong, Sin Min | |
dc.date.accessioned | 2017-06-06T13:08:43Z | |
dc.date.available | 2017-06-06T13:08:43Z | |
dc.date.created | 1978 | |
dc.date.issued | 1978 | |
dc.identifier.uri | http://knowledgecommons.lakeheadu.ca/handle/2453/2260 | |
dc.description.abstract | Low field electrical transport properties of n-InSb in the temperature range 6.4K-300K have been studied under pressures up to 15 kbar using Hall measurements. The pressure dependence of the carrier concentration, the intrinsic gap and the extrinsic gap have been studied. The extrinsic gap, E[subscript D], is found to increase approximately exponentially with increasing pressure. This is responsible for carrier freeze-out under pressure. The scattering process at temperatures above lOOK is dominated by a combination of polar optical and electron-hole scattering while at temperatures below 40K it is dominated by neutral impurity and ionized impurity scattering. | |
dc.language.iso | en_US | |
dc.subject | Hall effect | |
dc.subject | Indium antinomide crystals | |
dc.subject | High pressure (Science) | |
dc.title | Hall effect investigations in n-InSb under pressure | |
dc.type | Thesis | |
etd.degree.name | Master of Science | |
etd.degree.level | Master | |
etd.degree.discipline | Physics | |
etd.degree.grantor | Lakehead University | |
Appears in Collections: | Retrospective theses |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
FongS1978m-1b.pdf | 5.45 MB | Adobe PDF | ![]() View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.