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https://knowledgecommons.lakeheadu.ca/handle/2453/314
Title: | Modeling of a high frequency field effect transitor on indium gallium nitride: the metal oxide semiconductor capacitor 1=channel model |
Authors: | Menkad, Tarik |
Keywords: | Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET);Quantum devices;Gallium Nitride high frequency field effect transistor (FET);Gallium nitride |
Issue Date: | 10-Nov-2012 |
Abstract: | Quantum devices are an important class of modern heterostructure devices in which quantum effects are exploited directly. A Gallium Nitride high frequency field effect transistor (FET), the subject of this work, exploits a newly found exciton source in Indium Gallium Nitride InxGa1-xN. These quasi-particles are used as a quantum electron source for the FET channel, made of Intrinsic Gallium Nitride (GaN). The present work addresses the natural need for providing this high frequency transistor with a device model. Following the same steps as those used in classical Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) modeling, a model for the metal oxide heterojunction capacitor; core of this high frequency field effect transistor, is first developed. |
URI: | http://knowledgecommons.lakeheadu.ca/handle/2453/314 |
metadata.etd.degree.discipline: | Engineering : Electrical & Computer |
metadata.etd.degree.name: | M.Sc. |
metadata.etd.degree.level: | Master |
metadata.dc.contributor.advisor: | Alexandrov, Dimiter Butcher, Scott |
Appears in Collections: | Electronic Theses and Dissertations from 2009 |
Files in This Item:
File | Description | Size | Format | |
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MenkadT2012m-1a.pdf | PDF/A - 1a compliance | 3.13 MB | Adobe PDF | View/Open |
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