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https://knowledgecommons.lakeheadu.ca/handle/2453/4168
Title: | Low temperature epitaxial growth of III-Nitride semiconductors on silicon carbide templates by remote plasma metal-organic chemical vapor deposition |
Authors: | Dubreuil, Robert |
Keywords: | Group III-Nitride (III-N) semiconductors;Silicon carbide |
Issue Date: | 2018 |
Abstract: | Group III-Nitride (III-N) semiconductors are of high interest due to their thermal and electrical properties. Opposed to other III-V group semiconductors III-N semiconductors are hexagonal wurtzite structures that have a direct bandgap across the entire composition range. This wide bandgap range covers from the deep ultra-violet to the infrared region of the electromagnetic spectrum. This makes the III-N semiconductor group ideal for LEDs, laser diodes and photodetectors. This thesis presents an in-depth study to the growth of III-Nitrides on Silicon Carbide (SiC) templates. Due to the difficulty in growing bulk crystals for the III-Nitrides, non-native substrates must be used. Because of this, there exists a lattice mismatch between the substrates and thin films grown on top. SiC proves to be an ideal substrate as the lattice mismatch is around 3.5%. Thin films of III-N were grown upon commercially purchased SiC templates using remote plasma enhanced metal organic chemical vapor deposition (RP-MOCVD) in the Lakehead University Semiconductor Research Lab. Results were characterized using x-ray diffraction (XRD), atomic force microscope (AFM), Energy-dispersive X-ray spectroscopy (EDX) and Ramen spectroscopy. |
URI: | http://knowledgecommons.lakeheadu.ca/handle/2453/4168 |
metadata.etd.degree.discipline: | Engineering : Electrical & Computer |
metadata.etd.degree.name: | Master of Science |
metadata.etd.degree.level: | Master |
Appears in Collections: | Electronic Theses and Dissertations from 2009 |
Files in This Item:
File | Description | Size | Format | |
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DubreuilR2018m-1b.pdf | 7.13 MB | Adobe PDF | ![]() View/Open |
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