Photoluminescence and raman characterization of PLEE and MBE grown semiconductor epilayers

dc.contributor.advisor	Keeler, W. J.
dc.contributor.author	Harrison, Dale A.
dc.date.accessioned	2017-06-06T13:07:06Z
dc.date.available	2017-06-06T13:07:06Z
dc.date.created	1994
dc.date.issued	1994
dc.identifier.uri	http://knowledgecommons.lakeheadu.ca/handle/2453/2140
dc.description.abstract	Photoluminescence and Raman investigations of selected alloy semiconductor epilayers are reported. Correlations relating optical spectra and a number of intrinsic and extrinsic properties of the materials studied are found. Of particular interest, preliminary measurements on a promising new quaternary system (InGaAlAs/InP) are reported and mixed mode AlAs-like LO Raman scattering processes in this material are identified for the first time. In addition, evidence for defect related photoluminescence associated with the energy gap region in CdTe is also reported.
dc.language.iso	en_US
dc.subject	Raman effect
dc.subject	Photoluminescence
dc.subject	Semiconductors optical properties
dc.title	Photoluminescence and raman characterization of PLEE and MBE grown semiconductor epilayers
dc.type	Thesis
etd.degree.name	Master of Science
etd.degree.level	Master
etd.degree.discipline	Physics
etd.degree.grantor	Lakehead University