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    Hall effect investigations in n-InSb under pressure

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    FongS1978m-1b.pdf (5.322Mb)

    Date

    1978

    Author

    Fong, Sin Min

    Degree

    Master of Science

    Discipline

    Physics

    Subject

    Hall effect
    Indium antinomide crystals
    High pressure (Science)

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    Abstract

    Low field electrical transport properties of n-InSb in the temperature range 6.4K-300K have been studied under pressures up to 15 kbar using Hall measurements. The pressure dependence of the carrier concentration, the intrinsic gap and the extrinsic gap have been studied. The extrinsic gap, E[subscript D], is found to increase approximately exponentially with increasing pressure. This is responsible for carrier freeze-out under pressure. The scattering process at temperatures above lOOK is dominated by a combination of polar optical and electron-hole scattering while at temperatures below 40K it is dominated by neutral impurity and ionized impurity scattering.

    URI

    http://knowledgecommons.lakeheadu.ca/handle/2453/2260

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