Hall effect investigations in n-InSb under pressure / by Sin Min Fong. --

Abstract

Low field electrical transport properties of n-InSb in the temperature range 6.4K-300K have been studied under pressures up to 15 kbar using Hall measurements. The pressure dependence of the carrier concentration, the intrinsic gap and the extrinsic gap have been studied. The extrinsic gap, E[subscript D], is found to increase approximately exponentially with increasing pressure. This is responsible for carrier freeze-out under pressure. The scattering process at temperatures above lOOK is dominated by a combination of polar optical and electron-hole scattering while at temperatures below 40K it is dominated by neutral impurity and ionized impurity scattering.