Hydrostatic pressure effect on the electrical conductivity of indium antimonide

dc.contributor.advisor	Paranjape, V. V.
dc.contributor.author	Lam, Hing Yee
dc.date.accessioned	2017-06-06T13:40:16Z
dc.date.available	2017-06-06T13:40:16Z
dc.date.created	1976
dc.date.issued	1976
dc.identifier.uri	http://knowledgecommons.lakeheadu.ca/handle/2453/2297
dc.description.abstract	The electrical conductivity of n-type InSb in the temperature range 77K - 300K has been calculated by using the Boltzmann equation with a relaxation time ansatz. The tv/o dominant scattering mechanisms in this temperature range are the impurity scattering and the polar scattering. The hydrostatic pressure effects on the electrical conductivity have been studied by considering the variations of the band structure, the carrier concentration, the electron effective mass and the static dielectric constant of the material. The variation of the electrical conductivity up to 10 kbar at the temperatures T = 81 K and T = 290 K is compared with experimental data.
dc.language.iso	en_US
dc.subject	Electric conductivity
dc.subject	Indium antimonide
dc.subject	Hydrostatic pressure
dc.title	Hydrostatic pressure effect on the electrical conductivity of indium antimonide
dc.type	Thesis
etd.degree.name	Master of Science
etd.degree.level	Master
etd.degree.discipline	Physics
etd.degree.grantor	Lakehead University