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dc.contributor.authorDubreuil, Robert
dc.date.accessioned2018-06-12T17:41:15Z
dc.date.available2018-06-12T17:41:15Z
dc.date.created2017
dc.date.issued2018
dc.identifier.urihttp://knowledgecommons.lakeheadu.ca/handle/2453/4168
dc.description.abstractGroup III-Nitride (III-N) semiconductors are of high interest due to their thermal and electrical properties. Opposed to other III-V group semiconductors III-N semiconductors are hexagonal wurtzite structures that have a direct bandgap across the entire composition range. This wide bandgap range covers from the deep ultra-violet to the infrared region of the electromagnetic spectrum. This makes the III-N semiconductor group ideal for LEDs, laser diodes and photodetectors. This thesis presents an in-depth study to the growth of III-Nitrides on Silicon Carbide (SiC) templates. Due to the difficulty in growing bulk crystals for the III-Nitrides, non-native substrates must be used. Because of this, there exists a lattice mismatch between the substrates and thin films grown on top. SiC proves to be an ideal substrate as the lattice mismatch is around 3.5%. Thin films of III-N were grown upon commercially purchased SiC templates using remote plasma enhanced metal organic chemical vapor deposition (RP-MOCVD) in the Lakehead University Semiconductor Research Lab. Results were characterized using x-ray diffraction (XRD), atomic force microscope (AFM), Energy-dispersive X-ray spectroscopy (EDX) and Ramen spectroscopy.en_US
dc.language.isoen_USen_US
dc.subjectGroup III-Nitride (III-N) semiconductorsen_US
dc.subjectSilicon carbideen_US
dc.titleLow temperature epitaxial growth of III-Nitride semiconductors on silicon carbide templates by remote plasma metal-organic chemical vapor depositionen_US
dc.typeThesisen_US
etd.degree.nameMaster of Scienceen_US
etd.degree.levelMasteren_US
etd.degree.disciplineEngineering : Electrical & Computeren_US
etd.degree.grantorLakehead Universityen_US


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