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dc.contributor.advisorAlexandrov, Dimiter
dc.contributor.authorNagorski, Matthew
dc.date.accessioned2021-06-15T14:10:56Z
dc.date.available2021-06-15T14:10:56Z
dc.date.issued2021
dc.identifier.urihttps://knowledgecommons.lakeheadu.ca/handle/2453/4813
dc.description.abstractTransparent and conducting Al-doped ZnO thin films with c-axis-preferred orientation were prepared on glass substrate via sol-gel route. The physical, optical and electrical properties were investigated to determine an optimal withdrawal speed, aluminum source and treatment in order to obtain a smooth, dense, highly crystalline, conductive and transparent thin film with a high figure of merit for transparent conducting oxide applications. An optimal withdrawal speed was found to be 2.5 cm/min. Optimal aluminum source and concentration was found to be 0.5 at.% using aluminum chloride hexahydrate. An additional treatment in an N2 environment was found to be the best method to improve the electrical properties of the films while maintaining high crystallinity and transparency.en_US
dc.language.isoen_USen_US
dc.subjectSol-gelen_US
dc.subjectThin film transistorsen_US
dc.subjectTransparent electrodesen_US
dc.subjectTransparent conducting oxidesen_US
dc.subjectZinc oxideen_US
dc.titleOptimization of the process for sol-gel derived ZnO:Al thin films for transparent conducting oxide applicationsen_US
dc.typeThesis
etd.degree.nameMaster of Scienceen_US
etd.degree.levelMasteren_US
etd.degree.disciplineEngineering : Electrical & Computeren_US
etd.degree.grantorLakehead Universityen_US


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