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Effect of a strong magnetic field on the Mott Transition in Semiconductors
(1970)
This thesis considers the effect of a magnetic field on
the transition from a conducting to a non-conducting state in impurity
semiconductors, with particular reference to indium antimonide.
Two models for such a ...
Diffusion of impurities from ion implants in silicon
(1974)
The use of shallow single and double impurity ion implants
as diffusion sources was studied on bare (111) silicon wafers
implanted at room temperature with 45 KeV boron, phosphorus and
arsenic. The samples were diffused ...
Elastic and inelastic scattering of conduction electrons from oscillating impurities in semiconductors
(1977)
Elastic scattering and inelastic scattering of conduction
electrons by oscillating ionized impurities in semiconductors
have been analyzed on the assumption that the scattering potential
is the Coulomb potential between ...