An X-band microwave bridge-interferometer is constructed for measuring the permittivity of solids. Using simple theory, the system is first tested with several materials of known permittivity (e.g. ertalon, plexiglas ...

The use of shallow single and double impurity ion implants as diffusion sources was studied on bare (111) silicon wafers implanted at room temperature with 45 KeV boron, phosphorus and arsenic. The samples were diffused ...