| dc.description.abstract | The use of shallow single and double impurity ion implants
as diffusion sources was studied on bare (111) silicon wafers
implanted at room temperature with 45 KeV boron, phosphorus and
arsenic. The samples were diffused in a vacuum from 900'^C to
I
llOO^C. The experimental diffusion profiles were wel 1 approximated
by a gaussian distribution, except near the surface. It was
determined that for single diffusions about 50% of the arsenic,
60% of the phosphorus and al1 of the boron ions became electrically
active after diffusion. Within experimental error, there was no
interaction evident between the simultaneously diffusing arsenic
and boron. The values of the diffusion coefficients obtained were
within the wide range of values quoted in the literature.
Some of the data presented in this thesis has been published
in a paper by: H. Heinrich, L. Hastings and J. Rozenbergs,
entitled: simultaneous Diffusion of lon-predeposited As and B
in Silicon, in the Journal of Applied Physics, October 1974. | |
