Photoluminescence and raman characterization of PLEE and MBE grown semiconductor epilayers

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dc.contributor.advisorKeeler, W. J.
dc.contributor.authorHarrison, Dale A.
dc.date.accessioned2017-06-06T13:07:06Z
dc.date.available2017-06-06T13:07:06Z
dc.date.created1994
dc.date.issued1994
dc.description.abstractPhotoluminescence and Raman investigations of selected alloy semiconductor epilayers are reported. Correlations relating optical spectra and a number of intrinsic and extrinsic properties of the materials studied are found. Of particular interest, preliminary measurements on a promising new quaternary system (InGaAlAs/InP) are reported and mixed mode AlAs-like LO Raman scattering processes in this material are identified for the first time. In addition, evidence for defect related photoluminescence associated with the energy gap region in CdTe is also reported.
dc.identifier.urihttp://knowledgecommons.lakeheadu.ca/handle/2453/2140
dc.language.isoen_US
dc.subjectRaman effect
dc.subjectPhotoluminescence
dc.subjectSemiconductors optical properties
dc.titlePhotoluminescence and raman characterization of PLEE and MBE grown semiconductor epilayers
dc.typeThesis
etd.degree.disciplinePhysics
etd.degree.grantorLakehead University
etd.degree.levelMaster
etd.degree.nameMaster of Science

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