Modeling of a high frequency field effect transitor on indium gallium nitride: the metal oxide semiconductor capacitor 1=channel model

Abstract

Quantum devices are an important class of modern heterostructure devices in which quantum effects are exploited directly. A Gallium Nitride high frequency field effect transistor (FET), the subject of this work, exploits a newly found exciton source in Indium Gallium Nitride InxGa1-xN. These quasi-particles are used as a quantum electron source for the FET channel, made of Intrinsic Gallium Nitride (GaN). The present work addresses the natural need for providing this high frequency transistor with a device model. Following the same steps as those used in classical Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) modeling, a model for the metal oxide heterojunction capacitor; core of this high frequency field effect transistor, is first developed.