• Hall effect investigations in n-InSb under pressure 

      Fong, Sin Min (1978)
      Low field electrical transport properties of n-InSb in the temperature range 6.4K-300K have been studied under pressures up to 15 kbar using Hall measurements. The pressure dependence of the carrier concentration, the ...
    • Hydrostatic pressure effect on the Gunn threshold electric effect in n-InSb 

      Ahmad, Nizam Uddin (1978)
      The Gunn effect as a function of pressure has been studied in n~type InSb. The Gunn threshold field is found to decrease with increasing pressure reaching a minimum at P ~ 9 kbars. It then increases while the oscillations ...
    • Pressure dependent extrinsic effects in InSb 

      Booth, Ian (1980)
      Electrical transport properties of n and p-type InSb in the temperature range 6.2-300K have been studied under pressures up to 15 kbar using Hall measurements. The donor gap in n-InSb is found to increase linearly with ...