Show simple item record

Elastic and inelastic scattering of conduction electrons from oscillating impurities in semiconductors

dc.contributor.advisorFrood, D. G.
dc.contributor.authorSuzuki, Akira
dc.date.accessioned2017-06-06T13:40:17Z
dc.date.available2017-06-06T13:40:17Z
dc.date.created1977
dc.date.issued1977
dc.identifier.urihttp://knowledgecommons.lakeheadu.ca/handle/2453/2302
dc.description.abstractElastic scattering and inelastic scattering of conduction electrons by oscillating ionized impurities in semiconductors have been analyzed on the assumption that the scattering potential is the Coulomb potential between the conduction electrons and the excess charge of the impurity ions and that the electrons are non-degenerate and have a simple spherical energy bands. Two possible cases for impurity oscillations by thermal agitation are considered; (i) ionized impurities oscillating with a localized oscillating frequency [symbol] , widely separated from the normal acoustic and optical modes of the crystal, and (ii) ionized impurities oscillating with frequencies common to those of host lattice.
dc.language.isoen_US
dc.subjectContamination (Technology)
dc.subjectSemiconductors
dc.subjectElectrons Scattering
dc.titleElastic and inelastic scattering of conduction electrons from oscillating impurities in semiconductors
dc.typeThesis
etd.degree.nameMaster of Science
etd.degree.levelMaster
etd.degree.disciplinePhysics
etd.degree.grantorLakehead University


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record