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    Optical determination of metal-semiconductor Schottky barriers

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    ChengS1982m-1b.pdf (4.879Mb)
    Date
    1982
    Author
    Cheng, Stephen Kwok-Wah
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    Abstract
    The photovoltage produced by a Schottky barrier photocell shows a strong temperature dependence if the barrier is not too large. We have used this temperature dependence to obtain the barrier height for several III-V semiconductor~Au, Ag combinations. The results suggest that a simple Fermi level difference model is most appropriate for many of these small barrier IlI-V photocells, This appears to be the case, even if the Fermi level difference leads to a barrier greater than the energy gap of the semiconductor.
    URI
    http://knowledgecommons.lakeheadu.ca/handle/2453/2329
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