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Optical determination of metal-semiconductor Schottky barriers

dc.contributor.advisorKeeler, W. J.
dc.contributor.authorCheng, Stephen Kwok-Wah
dc.date.accessioned2017-06-06T13:40:21Z
dc.date.available2017-06-06T13:40:21Z
dc.date.created1982
dc.date.issued1982
dc.identifier.urihttp://knowledgecommons.lakeheadu.ca/handle/2453/2329
dc.description.abstractThe photovoltage produced by a Schottky barrier photocell shows a strong temperature dependence if the barrier is not too large. We have used this temperature dependence to obtain the barrier height for several III-V semiconductor~Au, Ag combinations. The results suggest that a simple Fermi level difference model is most appropriate for many of these small barrier IlI-V photocells, This appears to be the case, even if the Fermi level difference leads to a barrier greater than the energy gap of the semiconductor.
dc.language.isoen_US
dc.subjectDiodes, Schottky-barrier
dc.subjectSemiconductor-metal boundaries
dc.titleOptical determination of metal-semiconductor Schottky barriers
dc.typeThesis
etd.degree.nameMaster of Science
etd.degree.levelMaster
etd.degree.disciplineChemistry
etd.degree.grantorLakehead University


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