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Hydrostatic pressure effect on the Gunn threshold electric effect in n-InSb
(1978)
The Gunn effect as a function of pressure has been
studied in n~type InSb. The Gunn threshold field is found to
decrease with increasing pressure reaching a minimum at P ~ 9
kbars. It then increases while the oscillations ...
Pressure dependent extrinsic effects in InSb
(1980)
Electrical transport properties of n and p-type InSb
in the temperature range 6.2-300K have been studied under
pressures up to 15 kbar using Hall measurements.
The donor gap in n-InSb is found to increase linearly
with ...
Hall effect investigations in n-InSb under pressure
(1978)
Low field electrical transport properties of n-InSb in the
temperature range 6.4K-300K have been studied under pressures up
to 15 kbar using Hall measurements. The pressure dependence of
the carrier concentration, the ...