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Modeling of a high frequency field effect transitor on indium gallium nitride: the metal oxide semiconductor capacitor 1=channel model
(2012-11-10)Quantum devices are an important class of modern heterostructure devices in which quantum effects are exploited directly. A Gallium Nitride high frequency field effect transistor (FET), the subject of this work, exploits ... -
P-type gallium nitride semiconductor development and characterization for LEDs and other devices
(2013)Migration Enhanced Afterglow (AIEAglow) is proposed as a fabrication technology to produce high indium content indium gallium nitride (IriGaN) LEDs operating in the green wavelengths. This research presents results for ...