Browsing by Advisor
Now showing items 1-7 of 7
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Development of nonlinear 3-D, and novel 2-D optical microscope imaging systems for time-lapse imaging
(2004)The design and development of a nonlinear two-photon, 3-D microscope imaging system, software for manipulation of 2-D and 3-D images, and the operation of a novel 2-D imaging system used for monitoring cultured live cell ... -
Effects of ultra violet and visible light on bacterial survival / by Natasha Vermeulen.
(2006)The optical dose in mJ/cm[superscript]2 for causing mortality of Escherichia coli, using wavelengths between 230-375 nm in the UV and 400-532 nm in the mid-visible spectral regions, has been determined in this study. ... -
Hall effect investigations in n-InSb under pressure
(1978)Low field electrical transport properties of n-InSb in the temperature range 6.4K-300K have been studied under pressures up to 15 kbar using Hall measurements. The pressure dependence of the carrier concentration, the ... -
Hydrostatic pressure effect on the Gunn threshold electric effect in n-InSb
(1978)The Gunn effect as a function of pressure has been studied in n~type InSb. The Gunn threshold field is found to decrease with increasing pressure reaching a minimum at P ~ 9 kbars. It then increases while the oscillations ... -
Optical determination of metal-semiconductor Schottky barriers
(1982)The photovoltage produced by a Schottky barrier photocell shows a strong temperature dependence if the barrier is not too large. We have used this temperature dependence to obtain the barrier height for several ... -
Photoluminescence and raman characterization of PLEE and MBE grown semiconductor epilayers
(1994)Photoluminescence and Raman investigations of selected alloy semiconductor epilayers are reported. Correlations relating optical spectra and a number of intrinsic and extrinsic properties of the materials studied are ... -
Pressure dependent extrinsic effects in InSb
(1980)Electrical transport properties of n and p-type InSb in the temperature range 6.2-300K have been studied under pressures up to 15 kbar using Hall measurements. The donor gap in n-InSb is found to increase linearly with ...